더미 웨이퍼 / 테스트 웨이퍼 (Dummy wafer / Test wafer)
더미 웨이퍼 / 테스트 웨이퍼 (Dummy wafer / Test wafer)
Wafers
당사는 글로벌 네트워크를 기반으로 반도체 Wafer 비즈니스를 전문적으로 수행하는 무역회사입니다.
다양한 공정·용도에 최적화된 Wafer를 안정적으로 소싱하여, Dummy Wafer, Test Wafer, Oxide Wafer, Sn Wafer, AL Wafer 등을 취급하고 있습니다.
리클레임(Reclaim) 전문 업체를 중심으로 한 고객사에 공급하고 있습니다.
Dummy Wafer
– Size : 12 inch / 8 inch / 6 inch
| No. | Item | 12 inch (300mm) | 8 inch (200mm) |
|---|---|---|---|
| 1 | Diameter | 300.0 ± 0.2 mm | 200.0 ± 0.2 mm |
| 2 | Thickness | 775 ± 25 µm | 725 ± 25 µm |
| Thickness Option : Can follow customer’s request | |||
| 3 | Notch Depth | 1 +0.25 / -0.00 mm | 1 +0.25 / -0.00 mm |
| 4 | Notch Angle | 90 +5 / -1 deg | 90 +5 / -1 deg |
| 5 | Notch Orientation | <110> ± 1.0 deg | <110> ± 1.0 deg |
| 6 | Edge Profile | SEMI M1.15–1000 Polished | SEMI M1.15–1000 Polished |
| 7 | Thickness Variation (TTV) | ≤ 25 µm | |
| 8 | Warp | ≤ 25 µm | |
Test Wafer
– Size : 12 inch / 8 inch / 6 inch
| No. | Item | 12 inch (300mm) | 8 inch (200mm) |
|---|---|---|---|
| 1 | Diameter | 300.0 ± 0.2 mm | 200.0 ± 0.2 mm |
| 2 | Thickness | 775 ± 25 µm | 725 ± 25 µm |
| 3 | Notch Depth | 1 +0.25 / -0.00 mm | |
| 4 | Notch Angle | 90 +5 / -1 deg | |
| 5 | Notch Orientation | <110> ± 1.0 deg | |
| 6 | Type | P | |
| 7 | Resistivity | > 1 ohm-cm | |
| 8 | Edge Profile | SEMI M1.15–1000 Polished | |
| 9 | Thickness Variation (TTV) | ≤ 25 µm | |
| 10 | Warp | ≤ 50 µm | |
| 11 | Surface Particle @0.3µm | ≤ 30 ea | |
| 12 | Surface Particle @0.2µm | ≤ 50 ea | |
| 13 | Surface Contamination | Al, Na, Ca, K, Cr, Ni, Fe, Cu, Zn <1E10 atoms/cm² | |
| 14 | Scratches | Not Allowed | |
| 15 | Treatment | Double side polished | Single side polished |
| 16 | Laser Marking | SEMI T7 and OCR on backside |
Al Wafer / Sn Wafer
– Size : 12 inch / 8 inch
| No. | Item | 12 inch (300mm) | 8 inch (200mm) |
|---|---|---|---|
| 1 | Diameter | 300.0 ± 0.2 mm | 200.0 ± 0.2 mm |
| 2 | Thickness | 775 ± 25 µm | 725 ± 25 µm |
| 3 | Notch Depth | 1 +0.25 / -0.00 mm | |
| 4 | Notch Angle | 90 +5 / -1 deg | |
| 5 | Notch Orientation | <110> ± 1.0 deg | |
| 6 | Edge Profile | SEMI M1.15–1000 Polished | |
| 7 | Al Layer Thickness | 1000 Å ~ 20000 Å ±10% | |
| 8 | Thickness Variation (TTV) | ≤ 25 µm | |
| 9 | Warp | ≤ 25 µm |
Thermal Oxide Wafer
– Size : 12 inch / 8 inch
| No. | Item | 12 inch (300mm) | 8 inch (200mm) |
|---|---|---|---|
| 1 | Diameter | 300.0 ± 0.2 mm | 200.0 ± 0.2 mm |
| 2 | Thickness | 775 ± 25 µm | 725 ± 25 µm |
| 3 | Notch Depth | 1 +0.25 / -0.00 mm | |
| 4 | Notch Angle | 90 +5 / -1 deg | |
| 5 | Notch Orientation | <110> ± 1.0 deg | |
| 6 | Edge Profile | SEMI M1.15–1000 Polished | |
| 7 | Oxide Layer Thickness | 1000 Å ~ 20000 Å ±10% | |
| 8 | Thickness Variation (TTV) | ≤ 25 µm | |
| 9 | Warp | ≤ 25 µm |